IRF5851TRPBF

IRF5851, IRF5851TR, IRF5851TRPBF

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Description

Parameters

ParameterIRF5851TRIRF5851TRPBF
IC package
Package
6-TSOP
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<960 mW
Input capacitance of field effect transistor
Ciss
400 pFVds = 15V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<2.7 A
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<90 mΩId, Vgs = 2.7A, 4.5V
MOSFET series
Series
HEXFET®
Gate charge
QG
6 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2
Continuous drain current of 2nd transistor
IDSS2
<2.2 A