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| Parameter | IRF5810TR | IRF5810TRPBF | |
|---|---|---|---|
IC package | Package | 6-TSOP | |
Manufacturer | Manufacturer | International Rectifier | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <960 mW | |
Input capacitance of field effect transistor | Ciss | 650 pFVds = 16V | |
Continuous voltage between drain and source | UDSS | <20 V | |
Continuous drain current | IDSS | <2.9 A | |
FET channel type | Channel | 2 P-Channel (Dual) | |
Channel resistance at ON state | RDS-ON | <90 mΩId, Vgs = 2.9A, 4.5V | |
MOSFET series | Series | HEXFET® | |
Gate charge | QG | 9.6 nCVgs = 4.5V | |
FET Feature | FET Feature | Logic Level Gate | |
Number of elements of the same type in single chip | Elements | 2 | |