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| Parameter | HAT2210R | |
|---|---|---|
IC package | Package | 8-SOP |
Manufacturer | Manufacturer | Renesas Technology America |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <1.5 W |
Input capacitance of field effect transistor | Ciss | 630 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <30 V |
Continuous drain current | IDSS | <7.5 A |
FET channel type | Channel | 2 N-Channel (Dual) |
Channel resistance at ON state | RDS-ON | <24 mΩId, Vgs = 3.75A, 10V |
Gate charge | QG | 4.6 nCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 |