GWM160-0055X1-SL

GWM160-0055X1, GWM160-0055X1-SL, GWM160-0055X1-SLSAM, GWM160-0055X1-SMD, GWM160-0055X1-SMDSAM

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Description

Parameters

ParameterGWM160-0055X1-SLGWM160-0055X1-SLSAMGWM160-0055X1-SMDGWM160-0055X1-SMDSAM
IC package
Package
Through HoleThrough HoleПоверхностный монтажПоверхностный монтаж
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-holeThrough-holeSurface mountSurface mount
Continuous voltage between drain and source
UDSS
<55 V
Continuous drain current
IDSS
<150 A
FET channel type
Channel
6 N-Channel (3-Phase Bridge)
Channel resistance at ON state
RDS-ON
<3.3 mΩId, Vgs = 100A, 10V
Gate charge
QG
105 nCVgs = 10V
FET Feature
FET Feature
Standard
Number of elements of the same type in single chip
Elements
6