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| Parameter | FQS4900TF | |
|---|---|---|
IC package | Package | 8-SOIC (3.9мм ширина) |
Manufacturer | Manufacturer | Fairchild Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <2 W |
Continuous drain current | IDSS | <1.3 A |
FET channel type | Channel | N and P-Channel |
Channel resistance at ON state | RDS-ON | <550 mΩId, Vgs = 650mA, 10V |
MOSFET series | Series | QFET™ |
Gate charge | QG | 2.1 nCVgs = 5V |
FET Feature | FET Feature | Standard |
Number of elements of the same type in single chip | Elements | 2 |
Continuous drain current of 2nd transistor | IDSS2 | <300 mA |