FDS4895

FDS4895, FDS4895C

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Description

Parameters

ParameterFDS4895C
IC package
Package
8-SOIC (3.9мм ширина)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<900 mW
Input capacitance of field effect transistor
Ciss
410 pFVds = 20V
Continuous voltage between drain and source
UDSS
<40 V
Continuous drain current
IDSS
<5.5 A
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<39 mΩId, Vgs = 5.5A, 10V
MOSFET series
Series
PowerTrench®
Gate charge
QG
10 nCVgs = 10V
FET Feature
FET Feature
Standard
Number of elements of the same type in single chip
Elements
2
Continuous drain current of 2nd transistor
IDSS2
<4.4 A