FDS4501H

FDS4501, FDS4501H

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Description

Parameters

ParameterFDS4501H
IC package
Package
8-SOIC (3.9мм ширина)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1 W
Input capacitance of field effect transistor
Ciss
1.958 nFVds = 10V
Continuous drain current
IDSS
<9.3 A
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<18 mΩId, Vgs = 9.3A, 10V
MOSFET series
Series
PowerTrench®
Gate charge
QG
27 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2
Continuous drain current of 2nd transistor
IDSS2
<5.6 A