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| Parameter | FDMJ1032C | |
|---|---|---|
IC package | Package | 6-MLP, 6-MicroFET™ |
Manufacturer | Manufacturer | Fairchild Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <800 mW |
Input capacitance of field effect transistor | Ciss | 270 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <3.2 A |
FET channel type | Channel | N and P-Channel |
Channel resistance at ON state | RDS-ON | <90 mΩId, Vgs = 3.2A, 4.5V |
MOSFET series | Series | PowerTrench® |
Gate charge | QG | 3 nCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 |
Continuous drain current of 2nd transistor | IDSS2 | <2.5 A |