FDG6321C

FDG6321, FDG6321C

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Description

Parameters

ParameterFDG6321C
IC package
Package
SC-70-6, SC-88, SOT-323-6, SOT-363
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<300 mW
Input capacitance of field effect transistor
Ciss
50 pFVds = 10V
Continuous voltage between drain and source
UDSS
<25 V
Continuous drain current
IDSS
<500 mA
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<450 mΩId, Vgs = 500mA, 4.5V
Gate charge
QG
2.3 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2
Continuous drain current of 2nd transistor
IDSS2
<410 mA