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| Parameter | FDC6322C | |
|---|---|---|
IC package | Package | 6-SSOT, SuperSOT-6 |
Manufacturer | Manufacturer | Fairchild Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <700 mW |
Input capacitance of field effect transistor | Ciss | 9.5 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <25 V |
Continuous drain current | IDSS | <220 mA |
FET channel type | Channel | N and P-Channel |
Channel resistance at ON state | RDS-ON | <4 ΩId, Vgs = 400mA, 4.5V |
Gate charge | QG | 700 pCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 |
Continuous drain current of 2nd transistor | IDSS2 | <460 mA |