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| Parameter | FDC6302P | |
|---|---|---|
IC package | Package | 6-SSOT, SuperSOT-6 |
Manufacturer | Manufacturer | Fairchild Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <700 mW |
Input capacitance of field effect transistor | Ciss | 11 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <25 V |
Continuous drain current | IDSS | <120 mA |
FET channel type | Channel | 2 P-Channel (Dual) |
Channel resistance at ON state | RDS-ON | <10 ΩId, Vgs = 200mA, 4.5V |
Gate charge | QG | 310 pCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 |