ECH8655R

ECH8655R, ECH8655R-TL-H

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Description

Parameters

ParameterECH8655R-TL-H
Manufacturer
Manufacturer
SANYO Semiconductor (U.S.A) Co
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.4 W
Continuous voltage between drain and source
UDSS
<24 V
Continuous drain current
IDSS
<9 A
FET channel type
Channel
2 N-Channel (Dual)
Channel resistance at ON state
RDS-ON
<17 mΩId, Vgs = 4.5A, 4.5V
Gate charge
QG
16.8 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2