ECH8619-TL-E

ECH8619, ECH8619-TL-E

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Description

Parameters

ParameterECH8619-TL-E
Manufacturer
Manufacturer
SANYO Semiconductor (U.S.A) Co
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.3 W
Input capacitance of field effect transistor
Ciss
560 pFVds = 20V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<3 A
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<93 mΩId, Vgs = 1.5A, 10V
Gate charge
QG
12.8 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2
Continuous drain current of 2nd transistor
IDSS2
<2 A