DMG1016

DMG1016, DMG1016V-7

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Description

Parameters

ParameterDMG1016V-7
IC package
Package
SOT-563
Manufacturer
Manufacturer
Diodes Inc
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<530 mW
Input capacitance of field effect transistor
Ciss
60.67 pFVds = 16V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<870 mA
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<400 mΩId, Vgs = 600mA, 4.5V
Gate charge
QG
740 pCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2
Continuous drain current of 2nd transistor
IDSS2
<640 mA