BSO612

BSO612, BSO612CV, BSO612CVG

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Description

Parameters

ParameterBSO612CVBSO612CVG
IC package
Package
SO-88-SOIC
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2 W
Input capacitance of field effect transistor
Ciss
340 pFVds = 25V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<3 A
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<120 mΩId, Vgs = 3A, 10V
MOSFET series
Series
SIPMOS®
Gate charge
QG
15.5 nCVgs = 10V
FET Feature
FET Feature
Standard
Number of elements of the same type in single chip
Elements
2
Continuous drain current of 2nd transistor
IDSS2
<2 A