BSO330N02

BSO330N02, BSO330N02KG

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Description

Parameters

ParameterBSO330N02KG
IC package
Package
DSO-8
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.4 W
Input capacitance of field effect transistor
Ciss
730 pFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<5.4 A
FET channel type
Channel
2 N-Channel (Dual)
Channel resistance at ON state
RDS-ON
<30 mΩId, Vgs = 6.5A, 4.5V
MOSFET series
Series
OptiMOS™
Gate charge
QG
4.9 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2