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| Parameter | BSO215C | |
|---|---|---|
IC package | Package | SO-8 |
Manufacturer | Manufacturer | Infineon Technologies |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <2 W |
Input capacitance of field effect transistor | Ciss | 246 pFVds = 25V |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <3.7 A |
FET channel type | Channel | N and P-Channel |
Channel resistance at ON state | RDS-ON | <100 mΩId, Vgs = 3.7A, 10V |
MOSFET series | Series | SIPMOS® |
Gate charge | QG | 11.5 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 |