This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
| Parameter | BSO211P | |
|---|---|---|
IC package | Package | SO-8 |
Manufacturer | Manufacturer | Infineon Technologies |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <2 W |
Input capacitance of field effect transistor | Ciss | 920 pFVds = 15V |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <4.7 A |
FET channel type | Channel | 2 P-Channel (Dual) |
Channel resistance at ON state | RDS-ON | <67 mΩId, Vgs = 4.7A, 4.5V |
MOSFET series | Series | OptiMOS™ |
Gate charge | QG | 23.9 nCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 |