BSC150N03

BSC150N03, BSC150N03LDG

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Description

Parameters

ParameterBSC150N03LDG
IC package
Package
TDSON-8
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.5 W
Input capacitance of field effect transistor
Ciss
1.1 nFVds = 15V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<20 A
FET channel type
Channel
2 N-Channel (Dual)
Channel resistance at ON state
RDS-ON
<15 mΩId, Vgs = 20A, 10V
MOSFET series
Series
OptiMOS™
Gate charge
QG
6.4 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2