APTM60A11U

APTM60A11U, APTM60A11UT1G

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Description

Parameters

ParameterAPTM60A11UT1G
IC package
Package
SP1 Module
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<390 W
Input capacitance of field effect transistor
Ciss
10.552 nFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<40 A
FET channel type
Channel
2 N-Channel (Half Bridge)
Channel resistance at ON state
RDS-ON
<132 mΩId, Vgs = 33A, 10V
Gate charge
QG
330 nCVgs = 10V
FET Feature
FET Feature
Standard
Number of elements of the same type in single chip
Elements
2