APTM50DUM17G

APTM50DUM17, APTM50DUM17G

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Description

Parameters

ParameterAPTM50DUM17G
IC package
Package
SP6
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<1.25 kW
Input capacitance of field effect transistor
Ciss
28 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<180 A
FET channel type
Channel
2 N-Channel (Dual)
Channel resistance at ON state
RDS-ON
<20 mΩId, Vgs = 90A, 10V
Gate charge
QG
560 nCVgs = 10V
FET Feature
FET Feature
Standard
Number of elements of the same type in single chip
Elements
2