APTM50AM38FTG

APTM50AM38, APTM50AM38FTG, APTM50AM38SCTG, APTM50AM38STG

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Description

Parameters

ParameterAPTM50AM38FTGAPTM50AM38SCTGAPTM50AM38STG
IC package
Package
SP4 Module
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<694 W
Input capacitance of field effect transistor
Ciss
11.2 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<90 A
FET channel type
Channel
2 N-Channel (Half Bridge)
Channel resistance at ON state
RDS-ON
<45 mΩId, Vgs = 45A, 10V
Gate charge
QG
246 nCVgs = 10V
FET Feature
FET Feature
Standard
Number of elements of the same type in single chip
Elements
2