APTM50AM19FG

APTM50AM19, APTM50AM19FG, APTM50AM19STG

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Description

Parameters

ParameterAPTM50AM19FGAPTM50AM19STG
IC package
Package
SP6
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<1.136 kW<1.25 kW
Input capacitance of field effect transistor
Ciss
22.4 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<163 A<170 A
FET channel type
Channel
2 N-Channel (Half Bridge)
Channel resistance at ON state
RDS-ON
<22.5 mΩId, Vgs = 81.5A, 10V<19 mΩId, Vgs = 85A, 10V
Gate charge
QG
492 nCVgs = 10V
FET Feature
FET Feature
Standard
Number of elements of the same type in single chip
Elements
2