APTM20DUM05G

APTM20DUM05, APTM20DUM05G, APTM20DUM05TG

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterAPTM20DUM05GAPTM20DUM05TG
IC package
Package
SP6
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<1.136 kW<1.25 kW
Input capacitance of field effect transistor
Ciss
27.4 nFVds = 25V40.8 nFVds = 25V
Continuous voltage between drain and source
UDSS
<200 V
Continuous drain current
IDSS
<317 A<333 A
FET channel type
Channel
2 N-Channel (Dual)
Channel resistance at ON state
RDS-ON
<6 mΩId, Vgs = 158.5A, 10V<5 mΩId, Vgs = 166.5A, 10V
Gate charge
QG
448 nCVgs = 10V1.184 µCVgs = 10V
FET Feature
FET Feature
Standard
Number of elements of the same type in single chip
Elements
2