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| Parameter | APTM120H57FT3G | APTM120H57FTG | |
|---|---|---|---|
IC package | Package | SP3 | SP4 Module |
Manufacturer | Manufacturer | Microsemi-PPG | |
Type of mounting a component on a board/circuit | Mount | On chassis/wire | |
Power dissipation | P | <390 W | |
Input capacitance of field effect transistor | Ciss | 5.155 nFVds = 25V | |
Continuous voltage between drain and source | UDSS | <1.2 kV | |
Continuous drain current | IDSS | <17 A | |
FET channel type | Channel | 4 N-Channel (H-Bridge) | |
Channel resistance at ON state | RDS-ON | <684 mΩId, Vgs = 8.5A, 10V | |
Gate charge | QG | 187 nCVgs = 10V | |
FET Feature | FET Feature | Standard | |
Number of elements of the same type in single chip | Elements | 4 | |