APTM10DHM09

APTM10DHM09, APTM10DHM09TG

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Description

Parameters

ParameterAPTM10DHM09TG
IC package
Package
SP4 Module
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<390 W
Input capacitance of field effect transistor
Ciss
9.875 nFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<139 A
FET channel type
Channel
2 N-Channel (Asymmetrical Bridge)
Channel resistance at ON state
RDS-ON
<10 mΩId, Vgs = 69.5A, 10V
Gate charge
QG
350 nCVgs = 10V
FET Feature
FET Feature
Standard
Number of elements of the same type in single chip
Elements
2