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| Parameter | APTM100H45SCTG | APTM100H45STG | |
|---|---|---|---|
IC package | Package | SP4 Module | |
Manufacturer | Manufacturer | Microsemi-PPG | |
Type of mounting a component on a board/circuit | Mount | On chassis/wire | |
Power dissipation | P | <357 W | |
Input capacitance of field effect transistor | Ciss | 4.35 nFVds = 25V | |
Continuous voltage between drain and source | UDSS | <1 kV | |
Continuous drain current | IDSS | <18 A | |
FET channel type | Channel | 4 N-Channel (H-Bridge) | |
Channel resistance at ON state | RDS-ON | <540 mΩId, Vgs = 9A, 10V | |
Gate charge | QG | 154 nCVgs = 10V | |
FET Feature | FET Feature | Standard | |
Number of elements of the same type in single chip | Elements | 4 | |