APTM100A23S

APTM100A23S, APTM100A23SCTG, APTM100A23STG

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Description

Parameters

ParameterAPTM100A23SCTGAPTM100A23STG
IC package
Package
SP4 Module
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<694 W
Input capacitance of field effect transistor
Ciss
8.7 nFVds = 25V
Continuous voltage between drain and source
UDSS
<1 kV
Continuous drain current
IDSS
<36 A
FET channel type
Channel
2 N-Channel (Half Bridge)
Channel resistance at ON state
RDS-ON
<270 mΩId, Vgs = 18A, 10V
Gate charge
QG
308 nCVgs = 10V
FET Feature
FET Feature
Standard
Number of elements of the same type in single chip
Elements
2