APTM100A13SG

APTM100A13S, APTM100A13SCG, APTM100A13SG

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Description

Parameters

ParameterAPTM100A13SCGAPTM100A13SG
IC package
Package
SP6
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<1.25 kW
Input capacitance of field effect transistor
Ciss
15.2 nFVds = 25V
Continuous voltage between drain and source
UDSS
<1 kV
Continuous drain current
IDSS
<65 A
FET channel type
Channel
2 N-Channel (Half Bridge)
Channel resistance at ON state
RDS-ON
<156 mΩId, Vgs = 32.5A, 10V
Gate charge
QG
562 nCVgs = 10V
FET Feature
FET Feature
Standard
Number of elements of the same type in single chip
Elements
2