APTC60AM35T1G

APTC60AM35, APTC60AM35SCTG, APTC60AM35T1G

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterAPTC60AM35SCTGAPTC60AM35T1G
IC package
Package
SP4 ModuleSP1 Module
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<416 W
Input capacitance of field effect transistor
Ciss
14 nFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<72 A
FET channel type
Channel
2 N-Channel (Half Bridge)
Channel resistance at ON state
RDS-ON
<35 mΩId, Vgs = 36A, 10V<35 mΩId, Vgs = 72A, 10V
Gate charge
QG
518 nCVgs = 10V
FET Feature
FET Feature
Standard
Number of elements of the same type in single chip
Elements
2