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| Parameter | 19MT050XF | |
|---|---|---|
Manufacturer | Manufacturer | Vishay/Semiconductors |
Type of mounting a component on a board/circuit | Mount | On chassis/wire |
Power dissipation | P | <1.14 kW |
Input capacitance of field effect transistor | Ciss | 7.21 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <500 V |
Continuous drain current | IDSS | <31 A |
FET channel type | Channel | 4 N-Channel (H-Bridge) |
Channel resistance at ON state | RDS-ON | <220 mΩId, Vgs = 19A, 10V |
Gate charge | QG | 160 nCVgs = 10V |
FET Feature | FET Feature | Standard |
Number of elements of the same type in single chip | Elements | 4 |