VMO550-01F

VMO550, VMO550-01F

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Description

Parameters

ParameterVMO550-01F
IC package
Package
Y3-DCB
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<2.2 kW
Input capacitance of field effect transistor
Ciss
50 nFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<590 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<2.1 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
HiPerFET™
Gate charge
QG
2 µCVgs = 10V
FET Feature
FET Feature
Standard