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| Parameter | TPCS8105(TE12L,Q,M | |
|---|---|---|
IC package | Package | 2-3R1F |
Manufacturer | Manufacturer | Toshiba |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <600 mW |
Input capacitance of field effect transistor | Ciss | 5.71 nFVds = 10V |
Continuous voltage between drain and source | UDSS | <30 V |
Continuous drain current | IDSS | <10 A |
FET channel type | Channel | P-ch |
Channel resistance at ON state | RDS-ON | <13.5 mΩId, Vgs = 5A, 10V |
Gate charge | QG | 107 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate |