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| Parameter | TPCP8001-H(TE85LFM | |
|---|---|---|
IC package | Package | 2-3V1K |
Manufacturer | Manufacturer | Toshiba |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <840 mW |
Input capacitance of field effect transistor | Ciss | 640 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <30 V |
Continuous drain current | IDSS | <7.2 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <16 mΩId, Vgs = 3.6A, 10V |
Gate charge | QG | 11 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate |