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| Parameter | TPCF8B01(TE85L) | TPCF8B01(TE85L,F) | TPCF8B01(TE85L,F,M | |
|---|---|---|---|---|
Manufacturer | Manufacturer | Toshiba | ||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Power dissipation | P | <1.35 W | ||
Input capacitance of field effect transistor | Ciss | 470 pFVds = 10V | ||
Continuous voltage between drain and source | UDSS | <20 V | ||
Continuous drain current | IDSS | <2.7 A | ||
FET channel type | Channel | P-ch | ||
Channel resistance at ON state | RDS-ON | <110 mΩId, Vgs = 1.4A, 4.5V | ||
Gate charge | QG | 6 nCVgs = 5V | ||
FET Feature | FET Feature | Diode (Isolated) | ||