TPCF8A01

TPCF8A01, TPCF8A01(TE85L), TPCF8A01(TE85L,F)

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Description

Parameters

ParameterTPCF8A01(TE85L)TPCF8A01(TE85L,F)
Manufacturer
Manufacturer
Toshiba
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<330 mW
Input capacitance of field effect transistor
Ciss
590 pFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<3 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<49 mΩId, Vgs = 1.5A, 4.5V
Gate charge
QG
7.5 nCVgs = 5V
FET Feature
FET Feature
Diode (Isolated)