TP0610KL-TR1-E3

TP0610, TP0610KL-TR1-E3, TP0610K-T1-E3

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Description

Parameters

ParameterTP0610KL-TR1-E3TP0610K-T1-E3
IC package
Package
TO-92-3 (Standard Body), TO-226SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Through-holeSurface mount
Power dissipation
P
<800 mW<350 mW
Input capacitance of field effect transistor
Ciss
(not set)23 pFVds = 25V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<270 mA<185 mA
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<6 ΩId, Vgs = 500mA, 10V
MOSFET series
Series
TrenchFET®
Gate charge
QG
3 nCVgs = 15V1.7 nCVgs = 15V
FET Feature
FET Feature
StandardLogic Level Gate