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| Parameter | TP0101K-T1-E3 | |
|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <350 mW |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <580 mA |
FET channel type | Channel | P-ch |
Channel resistance at ON state | RDS-ON | <650 mΩId, Vgs = 580mA, 4.5V |
MOSFET series | Series | TrenchFET® |
Gate charge | QG | 2.2 nCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |