STY60NK30

STY60NK30, STY60NK30Z

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Description

Parameters

ParameterSTY60NK30Z
IC package
Package
MAX247™
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<450 W
Input capacitance of field effect transistor
Ciss
7.2 nFVds = 25V
Continuous voltage between drain and source
UDSS
<300 V
Continuous drain current
IDSS
<60 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<45 mΩId, Vgs = 30A, 10V
MOSFET series
Series
SuperMESH™
Gate charge
QG
220 nCVgs = 10V
FET Feature
FET Feature
Standard