STW24NK55Z

STW24NK55, STW24NK55Z

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Description

Parameters

ParameterSTW24NK55Z
IC package
Package
TO-247-3
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<285 W
Input capacitance of field effect transistor
Ciss
4.3975 nFVds = 25V
Continuous voltage between drain and source
UDSS
<550 V
Continuous drain current
IDSS
<23 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<220 mΩId, Vgs = 11.5A, 10V
MOSFET series
Series
SuperMESH™
Gate charge
QG
130 nCVgs = 10V
FET Feature
FET Feature
Standard