STW21NM60

STW21NM60, STW21NM60N, STW21NM60ND

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Description

Parameters

ParameterSTW21NM60NSTW21NM60ND
IC package
Package
TO-247-3
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<140 W
Input capacitance of field effect transistor
Ciss
1.9 nFVds = 50V1.8 nFVds = 50V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<17 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<220 mΩId, Vgs = 8.5A, 10V
MOSFET series
Series
MDmesh™FDmesh™
Gate charge
QG
66 nCVgs = 10V60 nCVgs = 10V
FET Feature
FET Feature
Standard