STW20NM60

STW20NM60, STW20NM60FD

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Description

Parameters

ParameterSTW20NM60FD
IC package
Package
TO-247-3
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<214 W
Input capacitance of field effect transistor
Ciss
1.3 nFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<20 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<290 mΩId, Vgs = 10A, 10V
MOSFET series
Series
FDmesh™
Gate charge
QG
37 nCVgs = 10V
FET Feature
FET Feature
Standard