STV160NF03LAT4

STV160NF03, STV160NF03LAT4, STV160NF03LT4

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Description

Parameters

ParameterSTV160NF03LAT4STV160NF03LT4
IC package
Package
PowerSO-10 Exposed Bottom Pad
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<210 W
Input capacitance of field effect transistor
Ciss
5.35 nFVds = 25V4.7 nFVds = 25V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<160 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<3 mΩId, Vgs = 80A, 10V<2.8 mΩId, Vgs = 80A, 10V
MOSFET series
Series
STripFET™
Gate charge
QG
160 nCVgs = 10V140 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate