STU8NM60ND

STU8NM60, STU8NM60ND

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Description

Parameters

ParameterSTU8NM60ND
IC package
Package
IPak, TO-251, DPak (3 straight short leads + tab)
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<70 W
Input capacitance of field effect transistor
Ciss
560 pFVds = 50V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<7 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<700 mΩId, Vgs = 3.5A, 10V
MOSFET series
Series
FDmesh™
Gate charge
QG
22 nCVgs = 10V
FET Feature
FET Feature
Standard