STS1NK60Z

STS1NK60, STS1NK60Z

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Description

Parameters

ParameterSTS1NK60Z
IC package
Package
8-SOIC (3.9mm Width)
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2 W
Input capacitance of field effect transistor
Ciss
94 pFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<250 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<15 ΩId, Vgs = 400mA, 10V
MOSFET series
Series
SuperMESH™
Gate charge
QG
6.9 nCVgs = 10V
FET Feature
FET Feature
Standard