STP8NS25

STP8NS25, STP8NS25FP

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Description

Parameters

ParameterSTP8NS25FP
IC package
Package
TO-220FP
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<30 W
Input capacitance of field effect transistor
Ciss
770 pFVds = 25V
Continuous voltage between drain and source
UDSS
<250 V
Continuous drain current
IDSS
<8 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<450 mΩId, Vgs = 4A, 10V
MOSFET series
Series
MESH OVERLAY™
Gate charge
QG
51.8 nCVgs = 10V
FET Feature
FET Feature
Standard