STP8NM60D

STP8NM60, STP8NM60D, STP8NM60FP, STP8NM60N, STP8NM60ND

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Description

Parameters

ParameterSTP8NM60DSTP8NM60FPSTP8NM60NSTP8NM60ND
IC package
Package
TO-220-3 (Straight Leads), TO-220-3 (Straight Leads)TO-220-3 (Straight Leads), TO-220-3 Full Pack (Straight Leads)TO-220-3 (Straight Leads), TO-220-3 (Straight Leads)TO-220-3 (Straight Leads), TO-220
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<100 W<30 W<70 W<70 W
Input capacitance of field effect transistor
Ciss
380 pFVds = 25V400 pFVds = 25V560 pFVds = 50V560 pFVds = 50V
Continuous voltage between drain and source
UDSS
<600 V<650 V<600 V<600 V
Continuous drain current
IDSS
<8 A<8 A<7 A<7 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1 ΩId, Vgs = 2.5A, 10V<1 ΩId, Vgs = 2.5A, 10V<650 mΩId, Vgs = 3.5A, 10V<700 mΩId, Vgs = 3.5A, 10V
MOSFET series
Series
MDmesh™MDmesh™MDmesh™FDmesh™
Gate charge
QG
18 nCVgs = 10V18 nCVgs = 10V19 nCVgs = 10V22 nCVgs = 10V
FET Feature
FET Feature
Standard