STP21N65

STP21N65, STP21N65M5

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Description

Parameters

ParameterSTP21N65M5
IC package
Package
TO-220-3 (Straight Leads)
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<125 W
Input capacitance of field effect transistor
Ciss
1.95 nFVds = 100V
Continuous voltage between drain and source
UDSS
<650 V
Continuous drain current
IDSS
<17 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<190 mΩId, Vgs = 8.5A, 10V
MOSFET series
Series
MDmesh™
Gate charge
QG
50 nCVgs = 10V
FET Feature
FET Feature
Standard