STP12NM50

STP12NM50, STP12NM50FD, STP12NM50FP, STP12NM50N

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Description

Parameters

ParameterSTP12NM50FDSTP12NM50FPSTP12NM50N
IC package
Package
TO-220-3 (Straight Leads), TO-220-3 (Straight Leads)TO-220-3 (Straight Leads), TO-220-3 Full Pack (Straight Leads)TO-220-3 (Straight Leads), TO-220-3 (Straight Leads)
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<160 W<35 W<100 W
Input capacitance of field effect transistor
Ciss
1 nFVds = 25V1 nFVds = 25V940 pFVds = 50V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<12 A<12 A<11 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<400 mΩId, Vgs = 6A, 10V<350 mΩId, Vgs = 6A, 10V<380 mΩId, Vgs = 5.5A, 10V
MOSFET series
Series
FDmesh™MDmesh™MDmesh™
Gate charge
QG
12 nCVgs = 10V39 nCVgs = 10V30 nCVgs = 10V
FET Feature
FET Feature
Standard