STI42N65

STI42N65, STI42N65M5

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Description

Parameters

ParameterSTI42N65M5
IC package
Package
I²Pak, TO-262 (3 straight leads + tab)
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<190 W
Input capacitance of field effect transistor
Ciss
4.65 nFVds = 100V
Continuous voltage between drain and source
UDSS
<650 V
Continuous drain current
IDSS
<33 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<79 mΩId, Vgs = 16.5A, 10V
MOSFET series
Series
MDmesh™
Gate charge
QG
100 nCVgs = 10V
FET Feature
FET Feature
Standard